自然科学版 英文版
自然科学版 英文版
自然科学版 英文版

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中南大学学报(英文版)

Journal of Central South University

Vol. 26    No. 11    November 2019

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Inverse Stone-Thrower-Wales defect and transport properties of 9AGNR double-gate graphene nanoribbon FETs
Mohammad Bagher NASROLLAHNEJAD, Parviz KESHAVARZI

Electrical and Computer Engineering Department, Semnan University, Semnan, Iran

Abstract:Defect-based engineering of carbon nanostructures is becoming an important and powerful method to modify the electron transport properties in graphene nanoribbon FETs. In this paper, the impact of the position and symmetry of the ISTW defect on the performance of low dimensional 9AGNR double-gate graphene nanoribbon FET (DG-GNRFET) is investigated. Analyzing the transmission spectra, density of states and current-voltage characteristics shows that the defect effect on the electron transport is considerably varied depending on the positions and the orientations (the symmetric and asymmetric configuration) of the ISTW defect in the channel length. Based on the results, the asymmetric ISTW defect leads to a more controllability of the gate voltages over drain current, and drain current increases more than 5 times. The results have also con?rmed the ISTW defect engineering potential on controlling the channel electrical current of DG-AGNR FET.

 

Key words: inverse Stone-Thrower-Wales defect; electronic transport properties; graphene nanoribbon; tight binding; NEGF formalism

中南大学学报(自然科学版)
  ISSN 1672-7207
CN 43-1426/N
ZDXZAC
中南大学学报(英文版)
  ISSN 2095-2899
CN 43-1516/TB
JCSTFT
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