自然科学版 英文版
自然科学版 英文版
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中南大学学报(英文版)

Journal of Central South University

Vol. 22    No. 10    October 2015

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Influence of relative positions between RF coil and crucible onsapphire crystals by edge-defined film-fed growth (EFG) technique
WU Xiao-feng(吴小凤)1, YAO Zheng-jun(姚正军)1, PEI Guang-qing(裴广庆)2, LUO Xi-xi(罗西希)1, XU Shang-jun(徐尚君)1, LIN Yu-hua(林玉划)1, YANG Hong-qin(杨红勤)1

1. College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics,
Nanjing 210016, China;
2. Research Center, Unionlight Technology Company Limited, Wuxi 214000, China

Abstract:To obtain the stable temperature field required for growing sapphire crystals, the influence of relative positions between RF coil and crucible on the performances of sapphires produced by edge-defined film-fed growth (EFG) technique was investigated. For comparison, the crucible was located at the top (case A) and the middle (case B) of the RF coil, respectively. Furthermore, the lattice integrities were studied by the double-crystal X-ray diffraction, and the dislocations were observed under the optical microscope and atomic force microscope after corroding in molten KOH at 390 °C. The crystals in case B exhibit better lattice integrity with smaller full width at half maximum of 29.13 rad·s, while the value in case A is 45.17 rad·s. The morphologies of dislocation etch pits in both cases show typical triangular symmetry with smooth surfaces. However, the dislocation density of 2.8×104 cm-2 in case B is only half of that in case A, and the distribution is more uniform, compared to the U-shaper in case A.

 

Key words: sapphire single-crystal; edge-defined film-fed growth; two relative positions; lattice integrity; dislocations

中南大学学报(自然科学版)
  ISSN 1672-7207
CN 43-1426/N
ZDXZAC
中南大学学报(英文版)
  ISSN 2095-2899
CN 43-1516/TB
JCSTFT
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